IZO deposition by RF and DC sputtering on paper and application on flexible electrochromic devices : Innovative progress in materials for display technologies
Identifieur interne : 000B62 ( Main/Repository ); précédent : 000B61; suivant : 000B63IZO deposition by RF and DC sputtering on paper and application on flexible electrochromic devices : Innovative progress in materials for display technologies
Auteurs : RBID : Pascal:14-0001361Descripteurs français
- Pascal (Inist)
- Pulvérisation haute fréquence, Dispositif électrochromique, Dépôt pulvérisation, Radiofréquence, Courant continu, Caractéristique électrique, Caractéristique optique, Optimisation, Ecoulement gaz, Régime optimal, Résistivité couche, Facteur transmission, Rayonnement visible, Spectre visible, Propriété matériau, Cyclage, Contraste image, Chromaticité, Sérigraphie, Oxyde d'indium, Oxyde de zinc, Céramique, Argon, Oxygène, Couche mince, Styrènesulfonate polymère, Thiophène dérivé polymère, Mélange polymère, Fabrication microélectronique, 8115C.
- Wicri :
English descriptors
- KwdEn :
- Argon, Ceramic materials, Chromaticity, Cycling, Direct current, Electrical characteristic, Electrochromic device, Gas flow, Image contrast, Indium oxide, Microelectronic fabrication, Optical characteristic, Optimal conditions, Optimization, Oxygen, Polymer blends, Properties of materials, Radiofrequency, Radiofrequency sputtering, Serigraphy, Sheet resistivity, Sputter deposition, Styrenesulfonate polymer, Thin film, Thiophene derivative polymer, Transmittance, Visible radiation, Visible spectrum, Zinc oxide.
Abstract
The present work describes indium-zinc oxide (IZO) sputtering depositions onto several types of papers, using radio-frequency (RF) and direct current (DC) sputtering with a ceramic IZO target. The electrical and optical properties of the resulting materials were optimized; by studying the argon and oxygen gas flow rates and the sputtering power effects. At optimal deposition conditions, thin films of IZO were achieved with a low sheet resistance (about 20 Ω/sq) and an optical transmittance of ca. 80% in the visible spectrum range. These materials retained these properties for more than 8 months. Electrochromic devices (ECDs) with several configurations were built with those conductive papers and life cycling and contrast were measured for the ECDs. These devices exhibited a very good color contrast (as defined using L*a*b* color coordinates, = 32) and electrochromic cyclability up to 30,000 redox cycles.
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T. Laia</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Requimte, Departamento de Química, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa</s1><s2>2829-516 Caparica</s2><s3>PRT</s3><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Portugal</country><wicri:noRegion>2829-516 Caparica</wicri:noRegion></affiliation></author><author><name sortKey="Costa, Cl Udia" uniqKey="Costa C">Cl Udia Costa</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>YDreams, Madan Parque - Sul</s1><s2>2825-149 Caparica</s2><s3>PRT</s3><sZ>10 aut.</sZ></inist:fA14><country>Portugal</country><wicri:noRegion>2825-149 Caparica</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Requimte, Departamento de Química, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa</s1><s2>2829-516 Caparica</s2><s3>PRT</s3><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Portugal</country><wicri:noRegion>2829-516 Caparica</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0001361</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 14-0001361 INIST</idno><idno type="RBID">Pascal:14-0001361</idno><idno type="wicri:Area/Main/Corpus">000381</idno><idno type="wicri:Area/Main/Repository">000B62</idno></publicationStmt><seriesStmt><idno type="ISSN">0141-9382</idno><title level="j" type="abbreviated">Displays</title><title level="j" type="main">Displays</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Argon</term><term>Ceramic materials</term><term>Chromaticity</term><term>Cycling</term><term>Direct current</term><term>Electrical characteristic</term><term>Electrochromic device</term><term>Gas flow</term><term>Image contrast</term><term>Indium oxide</term><term>Microelectronic fabrication</term><term>Optical characteristic</term><term>Optimal conditions</term><term>Optimization</term><term>Oxygen</term><term>Polymer blends</term><term>Properties of materials</term><term>Radiofrequency</term><term>Radiofrequency sputtering</term><term>Serigraphy</term><term>Sheet resistivity</term><term>Sputter deposition</term><term>Styrenesulfonate polymer</term><term>Thin film</term><term>Thiophene derivative polymer</term><term>Transmittance</term><term>Visible radiation</term><term>Visible spectrum</term><term>Zinc oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Pulvérisation haute fréquence</term><term>Dispositif électrochromique</term><term>Dépôt pulvérisation</term><term>Radiofréquence</term><term>Courant continu</term><term>Caractéristique électrique</term><term>Caractéristique optique</term><term>Optimisation</term><term>Ecoulement gaz</term><term>Régime optimal</term><term>Résistivité couche</term><term>Facteur transmission</term><term>Rayonnement visible</term><term>Spectre visible</term><term>Propriété matériau</term><term>Cyclage</term><term>Contraste image</term><term>Chromaticité</term><term>Sérigraphie</term><term>Oxyde d'indium</term><term>Oxyde de zinc</term><term>Céramique</term><term>Argon</term><term>Oxygène</term><term>Couche mince</term><term>Styrènesulfonate polymère</term><term>Thiophène dérivé polymère</term><term>Mélange polymère</term><term>Fabrication microélectronique</term><term>8115C</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Céramique</term><term>Oxygène</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The present work describes indium-zinc oxide (IZO) sputtering depositions onto several types of papers, using radio-frequency (RF) and direct current (DC) sputtering with a ceramic IZO target. The electrical and optical properties of the resulting materials were optimized; by studying the argon and oxygen gas flow rates and the sputtering power effects. At optimal deposition conditions, thin films of IZO were achieved with a low sheet resistance (about 20 Ω/sq) and an optical transmittance of ca. 80% in the visible spectrum range. These materials retained these properties for more than 8 months. Electrochromic devices (ECDs) with several configurations were built with those conductive papers and life cycling and contrast were measured for the ECDs. These devices exhibited a very good color contrast (as defined using L*a*b* color coordinates, = 32) and electrochromic cyclability up to 30,000 redox cycles.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0141-9382</s0></fA01><fA02 i1="01"><s0>DISPDP</s0></fA02><fA03 i2="1"><s0>Displays</s0></fA03><fA05><s2>34</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>IZO deposition by RF and DC sputtering on paper and application on flexible electrochromic devices : Innovative progress in materials for display technologies</s1></fA08><fA11 i1="01" i2="1"><s1>GOMES (Lúcia)</s1></fA11><fA11 i1="02" i2="1"><s1>MARQUES (Ana)</s1></fA11><fA11 i1="03" i2="1"><s1>BRANCO (Aida)</s1></fA11><fA11 i1="04" i2="1"><s1>ARAUJO (Jorge)</s1></fA11><fA11 i1="05" i2="1"><s1>SIMOES (Mário)</s1></fA11><fA11 i1="06" i2="1"><s1>CARDOSO (Susana)</s1></fA11><fA11 i1="07" i2="1"><s1>SILVA (Fernando)</s1></fA11><fA11 i1="08" i2="1"><s1>HENRIQUES (Inês)</s1></fA11><fA11 i1="09" i2="1"><s1>LAIA (César A. T.)</s1></fA11><fA11 i1="10" i2="1"><s1>COSTA (Cláudia)</s1></fA11><fA14 i1="01"><s1>YDreams, Madan Parque - Sul</s1><s2>2825-149 Caparica</s2><s3>PRT</s3><sZ>10 aut.</sZ></fA14><fA14 i1="02"><s1>Requimte, Departamento de Química, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa</s1><s2>2829-516 Caparica</s2><s3>PRT</s3><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="03"><s1>Ynvisible, Rua Mouzinho de Albuquerque 7</s1><s2>2070-104 Cartaxo</s2><s3>PRT</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="04"><s1>INESC-Microsistemas e Nanotecnologias (INESC-MN) and Instituto de Nanociência e Nanotechnologia (IN), Rua Alves Redol 9</s1><s2>1000-029 Lisbon</s2><s3>PRT</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA20><s1>326-333</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18229</s2><s5>354000150795520110</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>14 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0001361</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Displays</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The present work describes indium-zinc oxide (IZO) sputtering depositions onto several types of papers, using radio-frequency (RF) and direct current (DC) sputtering with a ceramic IZO target. The electrical and optical properties of the resulting materials were optimized; by studying the argon and oxygen gas flow rates and the sputtering power effects. At optimal deposition conditions, thin films of IZO were achieved with a low sheet resistance (about 20 Ω/sq) and an optical transmittance of ca. 80% in the visible spectrum range. These materials retained these properties for more than 8 months. Electrochromic devices (ECDs) with several configurations were built with those conductive papers and life cycling and contrast were measured for the ECDs. These devices exhibited a very good color contrast (as defined using L*a*b* color coordinates, = 32) and electrochromic cyclability up to 30,000 redox cycles.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="02" i2="X"><s0>001D03C</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A15C</s0></fC02><fC02 i1="04" i2="X"><s0>001D03F17</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Pulvérisation haute fréquence</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Radiofrequency sputtering</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Pulverización alta frecuencia</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Dispositif électrochromique</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Electrochromic device</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Dispositivo electrocrómico</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Dépôt pulvérisation</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Sputter deposition</s0><s5>03</s5></fC03><fC03 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l="FRE"><s0>Rayonnement visible</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Visible radiation</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Radiación visible</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Spectre visible</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Visible spectrum</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Espectro visible</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Propriété matériau</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Properties of materials</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Propiedad material</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Cyclage</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Cycling</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Ciclaje</s0><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Contraste image</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Image contrast</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Imagen contraste</s0><s5>17</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Chromaticité</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Chromaticity</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Cromaticidad</s0><s5>18</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Sérigraphie</s0><s5>19</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Serigraphy</s0><s5>19</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Serigrafía</s0><s5>19</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>22</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Indium oxide</s0><s5>22</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Indio óxido</s0><s5>22</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Oxyde de zinc</s0><s5>23</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Zinc oxide</s0><s5>23</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Zinc óxido</s0><s5>23</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Céramique</s0><s5>24</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>Ceramic materials</s0><s5>24</s5></fC03><fC03 i1="22" i2="X" l="SPA"><s0>Cerámica</s0><s5>24</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>Argon</s0><s2>NC</s2><s5>25</s5></fC03><fC03 i1="23" i2="X" l="ENG"><s0>Argon</s0><s2>NC</s2><s5>25</s5></fC03><fC03 i1="23" i2="X" l="SPA"><s0>Argón</s0><s2>NC</s2><s5>25</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>Oxygène</s0><s2>NC</s2><s2>FX</s2><s5>26</s5></fC03><fC03 i1="24" i2="X" l="ENG"><s0>Oxygen</s0><s2>NC</s2><s2>FX</s2><s5>26</s5></fC03><fC03 i1="24" i2="X" l="SPA"><s0>Oxígeno</s0><s2>NC</s2><s2>FX</s2><s5>26</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>Couche mince</s0><s5>27</s5></fC03><fC03 i1="25" i2="X" l="ENG"><s0>Thin film</s0><s5>27</s5></fC03><fC03 i1="25" i2="X" l="SPA"><s0>Capa fina</s0><s5>27</s5></fC03><fC03 i1="26" i2="X" l="FRE"><s0>Styrènesulfonate polymère</s0><s2>NK</s2><s5>28</s5></fC03><fC03 i1="26" i2="X" l="ENG"><s0>Styrenesulfonate polymer</s0><s2>NK</s2><s5>28</s5></fC03><fC03 i1="26" i2="X" l="SPA"><s0>Estireno sulfonato polímero</s0><s2>NK</s2><s5>28</s5></fC03><fC03 i1="27" i2="X" l="FRE"><s0>Thiophène dérivé polymère</s0><s2>NK</s2><s5>29</s5></fC03><fC03 i1="27" i2="X" l="ENG"><s0>Thiophene derivative polymer</s0><s2>NK</s2><s5>29</s5></fC03><fC03 i1="27" i2="X" l="SPA"><s0>Tiofeno derivado polímero</s0><s2>NK</s2><s5>29</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>Mélange polymère</s0><s5>30</s5></fC03><fC03 i1="28" i2="3" l="ENG"><s0>Polymer blends</s0><s5>30</s5></fC03><fC03 i1="29" i2="X" l="FRE"><s0>Fabrication microélectronique</s0><s5>46</s5></fC03><fC03 i1="29" i2="X" l="ENG"><s0>Microelectronic fabrication</s0><s5>46</s5></fC03><fC03 i1="29" i2="X" l="SPA"><s0>Fabricación microeléctrica</s0><s5>46</s5></fC03><fC03 i1="30" i2="X" l="FRE"><s0>8115C</s0><s4>INC</s4><s5>56</s5></fC03><fN21><s1>006</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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